Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
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RFQ
2,728
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A 2-2J1C - Active Digi-Reel® 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 300mW US6 2 N-Channel (Dual) Logic Level Gate 30V 100mA 3.6 Ohm @ 10mA, 4V 1.5V @ 100µA 13.5pF @ 3V
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Per Unit
$0.46
RFQ
RFQ
3,678
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A 2-2J1C - Active Cut Tape (CT) 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 300mW US6 2 N-Channel (Dual) Logic Level Gate 30V 100mA 3.6 Ohm @ 10mA, 4V 1.5V @ 100µA 13.5pF @ 3V
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Per Unit
$0.07
RFQ
RFQ
602
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A 2-2J1C - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 300mW US6 2 N-Channel (Dual) Logic Level Gate 30V 100mA 3.6 Ohm @ 10mA, 4V 1.5V @ 100µA 13.5pF @ 3V
SSM6N15AFU,LF
RFQ
RFQ
2,728
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A 2-2J1C - Active Digi-Reel® 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 300mW US6 2 N-Channel (Dual) Logic Level Gate 30V 100mA 3.6 Ohm @ 10mA, 4V 1.5V @ 100µA 13.5pF @ 3V
SSM6N15AFU,LF
Per Unit
$0.46
RFQ
RFQ
3,678
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A 2-2J1C - Active Cut Tape (CT) 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 300mW US6 2 N-Channel (Dual) Logic Level Gate 30V 100mA 3.6 Ohm @ 10mA, 4V 1.5V @ 100µA 13.5pF @ 3V
SSM6N15AFU,LF
Per Unit
$0.07
RFQ
RFQ
602
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A 2-2J1C - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 300mW US6 2 N-Channel (Dual) Logic Level Gate 30V 100mA 3.6 Ohm @ 10mA, 4V 1.5V @ 100µA 13.5pF @ 3V