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62 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
1,193
In-stock
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,460
In-stock
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
1,228
In-stock
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Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,582
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
3,886
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25 Ohm | 20mV @ 10µA | - | 15pF @ 5V | |||
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RFQ |
2,915
In-stock
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Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14 Ohm | 10mV @ 20µA | - | 30pF @ 5V | |||
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RFQ |
1,861
In-stock
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | - | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,156
In-stock
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | - | Through Hole | 16-DIP (0.300", 7.62mm) | - | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
1,639
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
681
In-stock
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
3,788
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
3,620
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,304
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,434
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | - | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,320
In-stock
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
772
In-stock
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,580
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
3,843
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
1,946
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,895
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,843
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
2,441
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | |||
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RFQ |
1,787
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14 Ohm | 20mV @ 20µA | - | 30pF @ 5V | |||
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RFQ |
2,430
In-stock
|
Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | - | Active | Tube | -20°C ~ 125°C (TJ) | - | 8-SOIC (0.154", 3.90mm Width) | 1.3W | 8-SOIC | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | |||
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RFQ |
3,742
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14 Ohm | 10mV @ 20µA | - | 30pF @ 5V | |||
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RFQ |
2,264
In-stock
|
Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8DIP | - | Active | Tube | -20°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 1.3W | 8-PDIP | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | |||
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RFQ |
2,805
In-stock
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Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | - | Active | Tape & Reel (TR) | -20°C ~ 125°C (TJ) | - | 8-SOIC (0.154", 3.90mm Width) | 1.3W | 8-SOIC | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | |||
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|
RFQ |
1,898
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25 Ohm | 10mV @ 10µA | - | 15pF @ 5V | |||
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|
RFQ |
628
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25 Ohm | 10mV @ 10µA | - | 15pF @ 5V | |||
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|
RFQ |
1,650
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25 Ohm | 20mV @ 10µA | - | 15pF @ 5V | |||
