- Series :
- Mounting Type :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
-
- 1.26V @ 1µA (8)
- 1.2V @ 10µA (10)
- 1.42V @ 1µA (8)
- 10mV @ 10µA (4)
- 10mV @ 1µA (8)
- 10mV @ 20µA (4)
- 1V @ 10µA (14)
- 1V @ 1µA (26)
- 20mV @ 10µA (44)
- 20mV @ 1µA (8)
- 20mV @ 20µA (4)
- 220mV @ 1µA (8)
- 3.35V @ 1µA (6)
- 3.45V @ 1µA (8)
- 360mV @ 1µA (8)
- 380mV @ 1µA (8)
- 420mV @ 1µA (8)
- 810mV @ 1µA (8)
- 820mV @ 1µA (8)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
204 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||
|
RFQ |
2,081
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
1,532
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | - | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75 Ohm @ 5V | 1V @ 10µA | - | ||||
|
RFQ |
1,076
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
3,478
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | - | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75 Ohm @ 5V | 1V @ 10µA | - | ||||
|
RFQ |
2,845
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8DIP | - | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270 Ohm @ 5V | 1.2V @ 10µA | 10pF @ 5V | ||||
|
RFQ |
3,888
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | - | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75 Ohm @ 5V | 1V @ 10µA | - | ||||
|
RFQ |
1,518
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500 Ohm @ 5.9V | 3.35V @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
1,007
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | - | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75 Ohm @ 5V | 1V @ 10µA | 10pF @ 5V | ||||
|
RFQ |
1,636
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 380mV @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
3,888
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | - | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 40mA | - | - | - | ||||
|
RFQ |
2,336
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8SOIC | - | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | - | - | - | ||||
|
RFQ |
2,397
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8DIP | - | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270 Ohm @ 5V | 1.2V @ 10µA | 10pF @ 5V | ||||
|
RFQ |
1,883
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | - | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75 Ohm @ 5V | 1V @ 10µA | - | ||||
|
RFQ |
1,193
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | ||||
|
RFQ |
2,460
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | ||||
|
RFQ |
640
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500 Ohm @ 4.8V | 810mV @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
1,526
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
1,228
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | ||||
|
RFQ |
2,582
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | ||||
|
RFQ |
1,428
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
3,586
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
768
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 360mV @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
3,285
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 360mV @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
3,886
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25 Ohm | 20mV @ 10µA | 15pF @ 5V | ||||
|
RFQ |
2,915
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14 Ohm | 10mV @ 20µA | 30pF @ 5V | ||||
|
RFQ |
1,096
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 380mV @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
2,922
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 380mV @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
746
In-stock
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500 Ohm @ 4.8V | 810mV @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
1,613
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500 Ohm @ 5.4V | 1.42V @ 1µA | 2.5pF @ 5V | ||||
|
RFQ |
1,861
In-stock
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | EPAD®, Zero Threshold™ | Active | Tube | - | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - |