Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Vishay Siliconix MOSFET N-CH 80V PPAK SO-8 $proddata[$product['id']]['package'] TrenchFET® Gen IV Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.2W (Ta), 65.7W (Tc) N-Channel 80V 16.7A (Ta), 59.6A (Tc) 7.4 mOhm @ 10A, 10V 3.8V @ 250µA 44nC @ 10V 1950pF @ 40V ±20V 7.5V, 10V
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Vishay Siliconix MOSFET N-CH 80V PPAK SO-8 $proddata[$product['id']]['package'] TrenchFET® Gen IV Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.2W (Ta), 65.7W (Tc) N-Channel 80V 16.7A (Ta), 59.6A (Tc) 7.4 mOhm @ 10A, 10V 3.8V @ 250µA 44nC @ 10V 1950pF @ 40V ±20V 7.5V, 10V
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$0.43
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Vishay Siliconix MOSFET N-CH 80V PPAK SO-8 $proddata[$product['id']]['package'] TrenchFET® Gen IV Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.2W (Ta), 65.7W (Tc) N-Channel 80V 16.7A (Ta), 59.6A (Tc) 7.4 mOhm @ 10A, 10V 3.8V @ 250µA 44nC @ 10V 1950pF @ 40V ±20V 7.5V, 10V