Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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STMicroelectronics NCHANNEL 600 V 105 MOHM TYP. 26 MDmesh™ M6 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 190W (Tc) N-Channel 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4.75V @ 250µA 33.4nC @ 10V 1515pF @ 100V ±25V 10V
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STMicroelectronics NCHANNEL 600 V 105 MOHM TYP. 26 MDmesh™ M6 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4.75V @ 250µA 33.4nC @ 10V 1515pF @ 100V ±25V 10V