Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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TSM220NB06CR
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RFQ
Taiwan Semiconductor Corporation 60V 35A SINGLE N-CHANNEL POWER M $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 68W (Tc) N-Channel 60V 8A (Ta), 35A (Tc) 22 mOhm @ 8A, 10V 4V @ 250µA 23nC @ 10V 1454pF @ 30V ±20V 10V
TSM220NB06CR
RFQ
VIEW
RFQ
Taiwan Semiconductor Corporation 60V 35A SINGLE N-CHANNEL POWER M $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 68W (Tc) N-Channel 60V 8A (Ta), 35A (Tc) 22 mOhm @ 8A, 10V 4V @ 250µA 23nC @ 10V 1454pF @ 30V ±20V 10V