Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Vgs (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Nexperia USA Inc. SMALL SIGNAL MOSFET Last Time Buy MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB 510mW (Ta), 4.15W (Tc) P-Channel 20V 4A (Ta) 36 mOhm @ 2.4A, 4.5V 950mV @ 250µA 15.5nC @ 4.5V 1890pF @ 10V ±8V 1.8V, 4.5V
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4,995
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Renesas Electronics America MOSFET N-CH 30V 25A HWSON $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-HWSON (3.3x3.3) 15W (Tc) N-Channel 30V 25A (Ta) 6.3 mOhm @ 12.5A, 10V   10.4nC @ 4.5V 1890pF @ 10V ±20V 4.5V, 10V
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$1.17
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4,995
In-stock
Renesas Electronics America MOSFET N-CH 30V 25A HWSON $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-HWSON (3.3x3.3) 15W (Tc) N-Channel 30V 25A (Ta) 6.3 mOhm @ 12.5A, 10V   10.4nC @ 4.5V 1890pF @ 10V ±20V 4.5V, 10V
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Renesas Electronics America MOSFET N-CH 30V 25A HWSON $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-HWSON (3.3x3.3) 15W (Tc) N-Channel 30V 25A (Ta) 6.3 mOhm @ 12.5A, 10V   10.4nC @ 4.5V 1890pF @ 10V ±20V 4.5V, 10V