Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
GLOBAL STOCKS
Default Photo
Per Unit
$12.26
RFQ
VIEW
RFQ
Vishay Siliconix MOSFET E SERIES 600V TO247AC E Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 357W (Tc) N-Channel 600V 63A (Tc)   5V @ 250µA 126nC @ 10V 4369pF @ 100V ±30V 10V
Default Photo
RFQ
RFQ
50
In-stock
Vishay Siliconix MOSFET P-CHAN 30 V POWERPAK 1212 TrenchFET® Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8SH PowerPAK® 1212-8SH 3.7W (Ta), 52W (Tc) P-Channel 30V   7 mOhm @ 15A, 10V 2.5V @ 250µA 126nC @ 10V 4427pF @ 15V ±20V 4.5V, 10V
Default Photo
Per Unit
$0.73
RFQ
RFQ
50
In-stock
Vishay Siliconix MOSFET P-CHAN 30 V POWERPAK 1212 TrenchFET® Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8SH PowerPAK® 1212-8SH 3.7W (Ta), 52W (Tc) P-Channel 30V   7 mOhm @ 15A, 10V 2.5V @ 250µA 126nC @ 10V 4427pF @ 15V ±20V 4.5V, 10V
Default Photo
Per Unit
$0.25
RFQ
VIEW
RFQ
Vishay Siliconix MOSFET P-CHAN 30 V POWERPAK 1212 TrenchFET® Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8SH PowerPAK® 1212-8SH 3.7W (Ta), 52W (Tc) P-Channel 30V   7 mOhm @ 15A, 10V 2.5V @ 250µA 126nC @ 10V 4427pF @ 15V ±20V 4.5V, 10V