- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Taiwan Semiconductor Corporation | 60V 107A SINGLE N-CHANNEL POWER | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 3.1W (Ta), 136W (Tc) | N-Channel | 60V | 16A (Ta), 107A (Tc) | 4.8 mOhm @ 16A, 10V | 2.5V @ 250µA | 105nC @ 10V | 6253pF @ 30V | ±20V | 4.5V, 10V | ||||
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VIEW | Taiwan Semiconductor Corporation | 60V 107A SINGLE N-CHANNEL POWER | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 3.1W (Ta), 136W (Tc) | N-Channel | 60V | 16A (Ta), 107A (Tc) | 4.8 mOhm @ 16A, 10V | 2.5V @ 250µA | 105nC @ 10V | 6253pF @ 30V | ±20V | 4.5V, 10V | ||||
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14
In-stock
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Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | Active | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-247-3 | TO-247 | 360W (Tc) | N-Channel | 650V | 57A (Ta) | 40 mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105nC @ 10V | 6250pF @ 300V | ±30V | 10V | ||||
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VIEW | Vishay Siliconix | MOSFET N-CH 80V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8DC | 6.25W (Ta), 125W (Tc) | N-Channel | 80V | 32.8A (Ta), 100A (Tc) | 2.9 mOhm @ 20A, 10V | 3.4V @ 250µA | 105nC @ 10V | 5150pF @ 40V | ±20V | 7.5V, 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 80V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8DC | 6.25W (Ta), 125W (Tc) | N-Channel | 80V | 32.8A (Ta), 100A (Tc) | 2.9 mOhm @ 20A, 10V | 3.4V @ 250µA | 105nC @ 10V | 5150pF @ 40V | ±20V | 7.5V, 10V | |||
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VIEW | Vishay Siliconix | MOSFET N-CH 80V | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8DC | 6.25W (Ta), 125W (Tc) | N-Channel | 80V | 32.8A (Ta), 100A (Tc) | 2.9 mOhm @ 20A, 10V | 3.4V @ 250µA | 105nC @ 10V | 5150pF @ 40V | ±20V | 7.5V, 10V | |||
