- Applied Filters :
3 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
|
|
RFQ |
50
In-stock
|
Vishay Siliconix | MOSFET P-CHAN 20 V POWERPAK 1212 | TrenchFET® Gen III | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | 3.7W (Ta), 52W (Tc) | P-Channel | 20V | 4.4 mOhm @ 20A, 10V | 1.5V @ 250µA | 183nC @ 10V | 5590pF @ 10V | ±12V | 2.5V, 10V | |||
|
|
|
RFQ |
50
In-stock
|
Vishay Siliconix | MOSFET P-CHAN 20 V POWERPAK 1212 | TrenchFET® Gen III | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | 3.7W (Ta), 52W (Tc) | P-Channel | 20V | 4.4 mOhm @ 20A, 10V | 1.5V @ 250µA | 183nC @ 10V | 5590pF @ 10V | ±12V | 2.5V, 10V | |||
|
|
|
VIEW | Vishay Siliconix | MOSFET P-CHAN 20 V POWERPAK 1212 | TrenchFET® Gen III | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | 3.7W (Ta), 52W (Tc) | P-Channel | 20V | 4.4 mOhm @ 20A, 10V | 1.5V @ 250µA | 183nC @ 10V | 5590pF @ 10V | ±12V | 2.5V, 10V | ||||
