Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Supplier Device Package FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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EPC TRANS GAN 100V BUMPED DIE $proddata[$product['id']]['package'] eGaN® Active GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die N-Channel 100V 16A (Ta) 7 mOhm @ 16A, 5V 2.5V @ 5mA 6.5nC @ 5V 685pF @ 50V +6V, -4V 5V
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$2.25
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EPC TRANS GAN 100V BUMPED DIE $proddata[$product['id']]['package'] eGaN® Active GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die N-Channel 100V 16A (Ta) 7 mOhm @ 16A, 5V 2.5V @ 5mA 6.5nC @ 5V 685pF @ 50V +6V, -4V 5V
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$0.95
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EPC TRANS GAN 100V BUMPED DIE $proddata[$product['id']]['package'] eGaN® Active GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die N-Channel 100V 16A (Ta) 7 mOhm @ 16A, 5V 2.5V @ 5mA 6.5nC @ 5V 685pF @ 50V +6V, -4V 5V