Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Taiwan Semiconductor Corporation 40V 75A SINGLE N-CHANNEL POWER M $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 83W (Tc) N-Channel 40V 15A (Ta), 75A (Tc) 7 mOhm @ 15A, 10V 2.5V @ 250µA 39nC @ 10V 2151pF @ 20V ±20V 4.5V, 10V
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Taiwan Semiconductor Corporation 40V 75A SINGLE N-CHANNEL POWER M $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 83W (Tc) N-Channel 40V 15A (Ta), 75A (Tc) 7 mOhm @ 15A, 10V 2.5V @ 250µA 39nC @ 10V 2151pF @ 20V ±20V 4.5V, 10V
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Taiwan Semiconductor Corporation 500V 13A SINGLE N-CHANNEL POWER $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 57W (Tc) N-Channel 500V 13A (Tc) 480 mOhm @ 3.3A, 10V 3.8V @ 250µA 39nC @ 10V 1877pF @ 50V ±30V 10V