Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Taiwan Semiconductor Corporation MOSFET N-CH 700V ITO220   Obsolete MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40W (Tc) N-Channel 700V 8A (Tc) 900 mOhm @ 4A, 10V 4V @ 250µA 32nC @ 10V 2006pF @ 25V ±30V 10V
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Vishay Siliconix MOSFET E SERIES 600V DPAK (TO-25 E Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 156W (Tc) N-Channel 600V 19A (Tc)   5V @ 250µA 32nC @ 10V 1080pF @ 100V ±30V 10V