Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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ON Semiconductor MOSFET N-CH 60V 20A DPAK $proddata[$product['id']]['package']   Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.88W (Ta), 60W (Tj) N-Channel 60V 20A (Ta) 46 mOhm @ 10A, 10V 4V @ 250µA 30nC @ 10V 1015pF @ 25V ±20V 10V
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200
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STMicroelectronics N-CHANNEL 100V 12A STRIPFET F7 P STripFET™ F7 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 52W (Tc) N-Channel 100V 44A (Tc) 13.3 mOhm @ 6A, 10V 4.5V @ 250µA 30nC @ 10V 1820pF @ 50V ±20V 10V
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$2.41
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200
In-stock
STMicroelectronics N-CHANNEL 100V 12A STRIPFET F7 P STripFET™ F7 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 52W (Tc) N-Channel 100V 44A (Tc) 13.3 mOhm @ 6A, 10V 4.5V @ 250µA 30nC @ 10V 1820pF @ 50V ±20V 10V
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$1.08
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STMicroelectronics N-CHANNEL 100V 12A STRIPFET F7 P STripFET™ F7 Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 52W (Tc) N-Channel 100V 44A (Tc) 13.3 mOhm @ 6A, 10V 4.5V @ 250µA 30nC @ 10V 1820pF @ 50V ±20V 10V