Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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RFQ
372
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Transphorm MOSFET N-CH 650V 34A TO247-3 Active GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-247-3 119W (Tc) N-Channel 650V 34A (Tc) 60 mOhm @ 22A, 10V 4.8V @ 700µA 24nC @ 10V 1000pF @ 400V ±20V 10V