- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Nexperia USA Inc. | NX3008NBK/SOT23/TO-236AB | Automotive, AEC-Q101 | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 350mW (Ta), 1.14W (Tc) | N-Channel | 30V | 400mA (Ta) | 1.4 Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | 50pF @ 15V | ±8V | 1.8V, 4.5V | |||||
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VIEW | Vishay Siliconix | MOSFET N-CHAN 30-V POWERPAK 0806 | TrenchFET® | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 | 1.25W (Ta) | N-Channel | 30V | 500mA (Ta) | 1.1V @ 250µA | 0.6nC @ 4.5V | 17pF @ 15V | ±8V | 1.8V, 4.5V | ||||||
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VIEW | Vishay Siliconix | MOSFET N-CHAN 30-V POWERPAK 0806 | TrenchFET® | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 | 1.25W (Ta) | N-Channel | 30V | 500mA (Ta) | 1.1V @ 250µA | 0.6nC @ 4.5V | 17pF @ 15V | ±8V | 1.8V, 4.5V | ||||||
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VIEW | Vishay Siliconix | MOSFET N-CHAN 30-V POWERPAK 0806 | TrenchFET® | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 | 1.25W (Ta) | N-Channel | 30V | 500mA (Ta) | 1.1V @ 250µA | 0.6nC @ 4.5V | 17pF @ 15V | ±8V | 1.8V, 4.5V | ||||||
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RFQ |
250
In-stock
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Texas Instruments | 20-V P-CHANNEL NEXFET POWER MOSF | NexFET™ | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | ±8V | 1.8V, 4.5V | ||||
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RFQ |
250
In-stock
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Texas Instruments | 20-V P-CHANNEL NEXFET POWER MOSF | NexFET™ | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | ±8V | 1.8V, 4.5V | ||||
|
RFQ |
250
In-stock
|
Texas Instruments | 20-V P-CHANNEL NEXFET POWER MOSF | NexFET™ | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | ±8V | 1.8V, 4.5V |