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- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Nexperia USA Inc. | PSMN3R7-100BSE/SOT404/D2PAK | Active | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 405W (Ta) | N-Channel | 100V | 120A (Ta) | 3.95 mOhm @ 25A, 10V | 4V @ 1mA | 246nC @ 10V | 16370pF @ 50V | ±20V | 10V | |||||
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VIEW | Microsemi Corporation | MOSFET N-CH 500V 26A D3PAK | $proddata[$product['id']]['package'] | POWER MOS V® | Obsolete | MOSFET (Metal Oxide) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | N-Channel | 500V | 26A (Tc) | 200 mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 4440pF @ 25V | 10V | ||||||
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113
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V TO220SIS | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | 1300pF @ 25V | ±30V | 10V | |||
