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| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | Active | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-247-3 | TO-247 | 360W (Tc) | N-Channel | 650V | 57A (Ta) | 40 mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105nC @ 10V | 6250pF @ 300V | ±30V | 10V | |||
