Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Taiwan Semiconductor Corporation 650V 7A SINGLE N-CHANNEL POWER M $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 50W (Tc) N-Channel 650V 7A (Tc) 1.35 Ohm @ 1.8A, 10V 3.8V @ 250µA 25nC @ 10V 1124pF @ 50V ±30V 10V