Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
Taiwan Semiconductor Corporation 40V 161AMP 2.5MO N CHANNEL MOSFE $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 136W (Tc) N-Channel 40V 24A (Ta), 161A (Tc) 2.5 mOhm @ 24A, 10V 2.5V @ 250µA 112nC @ 10V 6435pF @ 20V ±20V 4.5V, 10V
Default Photo
RFQ
VIEW
RFQ
Taiwan Semiconductor Corporation 40V 161AMP 2.5MO N CHANNEL MOSFE $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 3.1W (Ta), 136W (Tc) N-Channel 40V 24A (Ta), 161A (Tc) 2.5 mOhm @ 24A, 10V 2.5V @ 250µA 112nC @ 10V 6435pF @ 20V ±20V 4.5V, 10V