Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Technology	Operating Temperature	Mounting Type	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
GLOBAL STOCKS
	EPC2051ENGRT		RFQ	PDF RFQ	2,695 In-stock	EPC	TRANS GAN 100V DIE CU PILLAR	$proddata[$product['id']]['package']	eGaN®	Active	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	100V	1.7A	25 mOhm @ 3A, 5V	2.5V @ 1.5mA	2.3nC @ 5V	280pF @ 50V	+6V, -4V	5V
	EPC2051ENGRT	Per Unit $1.51	RFQ	PDF RFQ	2,695 In-stock	EPC	TRANS GAN 100V DIE CU PILLAR	$proddata[$product['id']]['package']	eGaN®	Active	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	100V	1.7A	25 mOhm @ 3A, 5V	2.5V @ 1.5mA	2.3nC @ 5V	280pF @ 50V	+6V, -4V	5V
	EPC2051ENGRT	Per Unit $0.59	RFQ	PDF RFQ	2,500 In-stock	EPC	TRANS GAN 100V DIE CU PILLAR	$proddata[$product['id']]['package']	eGaN®	Active	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	100V	1.7A	25 mOhm @ 3A, 5V	2.5V @ 1.5mA	2.3nC @ 5V	280pF @ 50V	+6V, -4V	5V
	EPC2051		RFQ	PDF RFQ	4,899 In-stock	EPC	TRANS GAN 100V DIE CU PILLAR		eGaN®	Active	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	100V	1.7A	25 mOhm @ 3A, 5V	2.5V @ 1.5mA	2.1nC @ 5V	258pF @ 50V	+6V, -4V	5V
	EPC2051	Per Unit $1.51	RFQ	PDF RFQ	4,899 In-stock	EPC	TRANS GAN 100V DIE CU PILLAR		eGaN®	Active	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	100V	1.7A	25 mOhm @ 3A, 5V	2.5V @ 1.5mA	2.1nC @ 5V	258pF @ 50V	+6V, -4V	5V
	EPC2051	Per Unit $0.58	RFQ	PDF RFQ	2,500 In-stock	EPC	TRANS GAN 100V DIE CU PILLAR		eGaN®	Active	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	100V	1.7A	25 mOhm @ 3A, 5V	2.5V @ 1.5mA	2.1nC @ 5V	258pF @ 50V	+6V, -4V	5V