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| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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RFQ |
10
In-stock
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Vishay Siliconix | MOSFET N-CH 20V PPAK 1212-8 | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | N-Channel | 20V | 43.7A (Ta), 162A (Tc) | 1.1 mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | 3415pF @ 10V | +12V, -8V | 2.5V, 10V | ||
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RFQ |
10
In-stock
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Vishay Siliconix | MOSFET N-CH 20V PPAK 1212-8 | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | N-Channel | 20V | 43.7A (Ta), 162A (Tc) | 1.1 mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | 3415pF @ 10V | +12V, -8V | 2.5V, 10V | ||
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VIEW | Vishay Siliconix | MOSFET N-CH 20V PPAK 1212-8 | $proddata[$product['id']]['package'] | TrenchFET® Gen IV | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | N-Channel | 20V | 43.7A (Ta), 162A (Tc) | 1.1 mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | 3415pF @ 10V | +12V, -8V | 2.5V, 10V | |||
