Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Microsemi Corporation MOSFET N-CH 600V 35A T-MAX $proddata[$product['id']]['package'] POWER MOS 7® Obsolete MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 500W (Tc) N-Channel 600V 35A (Tc) 170 mOhm @ 17.5A, 10V 5V @ 2.5mA 100nC @ 10V 4500pF @ 25V ±30V 10V
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Diodes Incorporated MOSFET P-CHANNEL 60V 35A TO252 $proddata[$product['id']]['package'] Automotive, AEC-Q101 Discontinued at Digi-Key MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 3.2W P-Channel 60V 35A (Tc) 33 mOhm @ 10A, 10V 3V @ 250µA 53.1nC @ 10V 2569pF @ 30V ±20V 4.5V, 10V
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$0.62
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Diodes Incorporated MOSFET P-CHANNEL 60V 35A TO252 $proddata[$product['id']]['package'] Automotive, AEC-Q101 Active MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 3.2W P-Channel 60V 35A (Tc) 33 mOhm @ 10A, 10V 3V @ 250µA 53.1nC @ 10V 2569pF @ 30V ±20V 4.5V, 10V
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$12.08
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Cree/Wolfspeed E-SERIES 900V, 65 MOHM, G3 SIC M $proddata[$product['id']]['package'] Automotive, AEC-Q101, E Active SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel 900V 35A (Tc) 84.5 mOhm @ 20A, 15V 3.5V @ 5mA 30.4nC @ 15V 660pF @ 600V +18V, -8V 15V