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Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
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	TSM4425CS RLG		RFQ VIEW	PDF RFQ		Taiwan Semiconductor Corporation	MOSFET P-CHANNEL 8SOP			Obsolete	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP	2.5W (Ta)	P-Channel	30V	11A (Tc)	12 mOhm @ 11A, 10V	3V @ 250µA	64nC @ 10V	3680pF @ 8V	±20V	4.5V, 10V
	IPB65R225C7ATMA2		RFQ VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 650V 11A TO-263-3	$proddata[$product['id']]['package']	CoolMOS™ C7	Active	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	63W (Tc)	N-Channel	650V	11A (Tc)	225 mOhm @ 4.8A, 10V	4V @ 240µA	20nC @ 10V	996pF @ 400V	±20V	10V
	IPB65R225C7ATMA2	Per Unit $2.99	RFQ VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 650V 11A TO-263-3	$proddata[$product['id']]['package']	CoolMOS™ C7	Active	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	63W (Tc)	N-Channel	650V	11A (Tc)	225 mOhm @ 4.8A, 10V	4V @ 240µA	20nC @ 10V	996pF @ 400V	±20V	10V
	IPB65R225C7ATMA2	Per Unit $1.35	RFQ VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 650V 11A TO-263-3	$proddata[$product['id']]['package']	CoolMOS™ C7	Active	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	63W (Tc)	N-Channel	650V	11A (Tc)	225 mOhm @ 4.8A, 10V	4V @ 240µA	20nC @ 10V	996pF @ 400V	±20V	10V

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