Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Vishay Siliconix MOSFET N-CH 30V $proddata[$product['id']]['package'] TrenchFET® Gen IV Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 46.3W (Tc) N-Channel Schottky Diode (Isolated) 30V 27.6A (Ta), 40A (Tc) 2.7 mOhm @ 15A, 10V 2.1V @ 250µA 58nC @ 10V 2455pF @ 15V +20V, -16V 4.5V, 10V
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Vishay Siliconix MOSFET N-CH 30V $proddata[$product['id']]['package'] TrenchFET® Gen IV Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 46.3W (Tc) N-Channel Schottky Diode (Isolated) 30V 27.6A (Ta), 40A (Tc) 2.7 mOhm @ 15A, 10V 2.1V @ 250µA 58nC @ 10V 2455pF @ 15V +20V, -16V 4.5V, 10V
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Vishay Siliconix MOSFET N-CH 30V $proddata[$product['id']]['package'] TrenchFET® Gen IV Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 46.3W (Tc) N-Channel Schottky Diode (Isolated) 30V 27.6A (Ta), 40A (Tc) 2.7 mOhm @ 15A, 10V 2.1V @ 250µA 58nC @ 10V 2455pF @ 15V +20V, -16V 4.5V, 10V