- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
4,000
In-stock
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Taiwan Semiconductor Corporation | 600V 4A SINGLE N-CHANNEL POWER M | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 41.6W (Tc) | N-Channel | 600V | 4A (Tc) | 2.2 Ohm @ 1.4A, 10V | 3.8V @ 250µA | 17.2nC @ 10V | 582pF @ 50V | ±30V | 10V | ||
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RFQ |
4,000
In-stock
|
Taiwan Semiconductor Corporation | 650V 4A SINGLE N-CHANNEL POWER M | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 41.6W (Tc) | N-Channel | 650V | 4A (Tc) | 2.6 Ohm @ 1.2A, 10V | 3.8V @ 250µA | 16.8nC @ 10V | 596pF @ 50V | ±30V | 10V | ||
