Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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$1.79
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Taiwan Semiconductor Corporation 500V, 9A, 0.9O SINGLE N-CHANNEL $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 50W (Tc) N-Channel 500V 9A (Tc) 900 mOhm @ 2.3A, 10V 3.8V @ 250µA 24.5nC @ 10V 1116pF @ 50V ±30V 10V
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$1.65
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Taiwan Semiconductor Corporation 650V 7A SINGLE N-CHANNEL POWER M $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 50W (Tc) N-Channel 650V 7A (Tc) 1.35 Ohm @ 1.8A, 10V 3.8V @ 250µA 25nC @ 10V 1124pF @ 50V ±30V 10V
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Taiwan Semiconductor Corporation 600V 7A SINGLE N-CHANNEL POWER M $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 50W (Tc) N-Channel 600V 7A (Tc) 1.2 Ohm @ 2A, 10V 3.8V @ 250µA 25nC @ 10V 1108pF @ 50V ±30V 10V
TSM4NB60CH C5G
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$0.89
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Taiwan Semiconductor Corporation 600V N CHANNEL MOSFET $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 50W (Tc) N-Channel 600V 4A 2.5 Ohm @ 2A, 10V 4.5V @ 250µA 14.5nC @ 10V 500pF @ 25V ±30V 10V