- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Rohm Semiconductor | MOSFET N-CH 20V 2A WEMT6 | $proddata[$product['id']]['package'] | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | ±10V | 1.5V, 4.5V | |||
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VIEW | Rohm Semiconductor | MOSFET N-CH 20V 2A WEMT6 | $proddata[$product['id']]['package'] | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | ±10V | 1.5V, 4.5V | |||
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VIEW | Toshiba Semiconductor and Storage | MOSFET N-CH 30V ES6 | Active | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | 20V | 2A (Ta) | 126 mOhm @ 1A, 4V | 1V @ 1mA | 3.4nC @ 10V | 195pF @ 10V | ±10V | 1.5V, 4V | ||||
