Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) Drive Voltage (Max Rds On, Min Rds On)
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 500MA TO92 Obsolete MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92 2.5W (Tc) N-Channel   600V 500mA (Tc) 10 Ohm @ 250mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V ±30V 10V
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2,000
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Microchip Technology MOSFET N-CH 400V 0.12A TO92-3 $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92 (TO-226) 1W (Tc) N-Channel Depletion Mode 400V 120mA (Tj) 25 Ohm @ 120mA, 0V     300pF @ 25V ±20V 0V
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$0.78
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2,000
In-stock
Microchip Technology MOSFET N-CH 400V 0.12A TO92-3 $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92 (TO-226) 1W (Tc) N-Channel Depletion Mode 400V 120mA (Tj) 25 Ohm @ 120mA, 0V     300pF @ 25V ±20V 0V
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Per Unit
$0.60
RFQ
RFQ
2,000
In-stock
Microchip Technology MOSFET N-CH 400V 0.12A TO92-3 $proddata[$product['id']]['package'] Active MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92 (TO-226) 1W (Tc) N-Channel Depletion Mode 400V 120mA (Tj) 25 Ohm @ 120mA, 0V     300pF @ 25V ±20V 0V