- Part Status :
- Mounting Type :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.4 Ohm @ 350mA, 4.5V (1)
- 1.43 Ohm @ 2A, 15V (3)
- 1.5 Ohm @ 1A, 10V (3)
- 105 mOhm @ 2A, 4.5V (2)
- 21 mOhm @ 10A, 10V (3)
- 222 mOhm @ 1.6A, 10V (1)
- 23.1 mOhm @ 4A, 4.5V (3)
- 24 mOhm @ 6.1A, 10V (1)
- 32 mOhm @ 5.5A, 4.5V (1)
- 32.4 mOhm @ 3A, 4.5V (3)
- 45 mOhm @ 4.6A, 10V (1)
- 49 mOhm @ 1.5A, 4.5V (1)
- 520 mOhm @ 6A, 10V (1)
- 6.3 mOhm @ 12.5A, 10V (3)
- 750 mOhm @ 5A, 10V (1)
- 9.7 mOhm @ 17.5A, 10V (3)
- 900 mOhm @ 4A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
32 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW | Nexperia USA Inc. | NX3008NBK/SOT23/TO-236AB | Automotive, AEC-Q101 | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 350mW (Ta), 1.14W (Tc) | N-Channel | 30V | 400mA (Ta) | 1.4 Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | 50pF @ 15V | ±8V | 1.8V, 4.5V | |||||
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VIEW | Nexperia USA Inc. | PMN50EPE/SOT457/SC-74 | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 560mW (Ta), 6.25mW (Tc) | P-Channel | 30V | 4.6A (Ta) | 45 mOhm @ 4.6A, 10V | 3V @ 250µA | 20nC @ 10V | 793pF @ 15V | ±20V | 4.5V, 10V | ||||||
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VIEW | Nexperia USA Inc. | PMN28UNE/SOT457/SC-74 | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 570mW (Ta), 6.25W (Tc) | N-Channel | 20V | 5.5A (Ta) | 32 mOhm @ 5.5A, 4.5V | 1V @ 250µA | 10nC @ 4.5V | 490pF @ 10V | ±8V | 1.8V, 4.5V | ||||||
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VIEW | Nexperia USA Inc. | PMN25ENE/SOT457/SC-74 | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 560mW (Ta), 6.25mW (Tc) | N-Channel | 30V | 6.1A (Ta) | 24 mOhm @ 6.1A, 10V | 2.5V @ 250µA | 18nC @ 10V | 597pF @ 15V | 20V | 4.5V, 10V | ||||||
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VIEW | Nexperia USA Inc. | PMN230ENE/SOT457/SC-74 | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 475mW (Ta), 3.9W (Tc) | N-Channel | 60V | 1.6A (Ta) | 222 mOhm @ 1.6A, 10V | 2.7V @ 250µA | 5nC @ 10V | 177pF @ 30V | ±20V | 4.5V, 10V | ||||||
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VIEW | Taiwan Semiconductor Corporation | MOSFET N-CH 700V ITO220 | Obsolete | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 40W (Tc) | N-Channel | 700V | 8A (Tc) | 900 mOhm @ 4A, 10V | 4V @ 250µA | 32nC @ 10V | 2006pF @ 25V | ±30V | 10V | ||||||
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VIEW | Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3A VS-8 | $proddata[$product['id']]['package'] | U-MOSIII | Obsolete | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 49 mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5nC @ 5V | 590pF @ 10V | ±12V | 2V, 4.5V | |||
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VIEW | Rohm Semiconductor | MOSFET N-CH 20V 2A WEMT6 | $proddata[$product['id']]['package'] | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | ±10V | 1.5V, 4.5V | |||||
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VIEW | Rohm Semiconductor | MOSFET N-CH 20V 2A WEMT6 | $proddata[$product['id']]['package'] | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | N-Channel | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | ±10V | 1.5V, 4.5V | |||||
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VIEW | Rohm Semiconductor | RS1P600BE IS A POWER MOSFET WITH | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 35W (Tc) | N-Channel | 100V | 17.5A (Ta), 60A (Tc) | 9.7 mOhm @ 17.5A, 10V | 4V @ 500µA | 33nC @ 10V | 2200pF @ 50V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | RS1P600BE IS A POWER MOSFET WITH | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 35W (Tc) | N-Channel | 100V | 17.5A (Ta), 60A (Tc) | 9.7 mOhm @ 17.5A, 10V | 4V @ 500µA | 33nC @ 10V | 2200pF @ 50V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | RS1P600BE IS A POWER MOSFET WITH | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 35W (Tc) | N-Channel | 100V | 17.5A (Ta), 60A (Tc) | 9.7 mOhm @ 17.5A, 10V | 4V @ 500µA | 33nC @ 10V | 2200pF @ 50V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | RQ3P300BE IS A POWER MOSFET WITH | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta), 32W (Tc) | N-Channel | 100V | 10A (Ta), 36A (Tc) | 21 mOhm @ 10A, 10V | 4V @ 200µA | 19.1nC @ 10V | 1250pF @ 50V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | RQ3P300BE IS A POWER MOSFET WITH | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta), 32W (Tc) | N-Channel | 100V | 10A (Ta), 36A (Tc) | 21 mOhm @ 10A, 10V | 4V @ 200µA | 19.1nC @ 10V | 1250pF @ 50V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | RQ3P300BE IS A POWER MOSFET WITH | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta), 32W (Tc) | N-Channel | 100V | 10A (Ta), 36A (Tc) | 21 mOhm @ 10A, 10V | 4V @ 200µA | 19.1nC @ 10V | 1250pF @ 50V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | MOSFET LOW ON-RESISTANCE AND FAS | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 60W (Tc) | N-Channel | 600V | 4A (Tc) | 1.43 Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | 260pF @ 100V | ±30V | 15V | ||||||
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VIEW | Rohm Semiconductor | MOSFET LOW ON-RESISTANCE AND FAS | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 60W (Tc) | N-Channel | 600V | 4A (Tc) | 1.43 Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | 260pF @ 100V | ±30V | 15V | ||||||
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VIEW | Rohm Semiconductor | MOSFET LOW ON-RESISTANCE AND FAS | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 60W (Tc) | N-Channel | 600V | 4A (Tc) | 1.43 Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | 260pF @ 100V | ±30V | 15V | ||||||
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VIEW | Rohm Semiconductor | MOSFET LOW ON-RESISTANCE AND FAS | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 44W (Tc) | N-Channel | 600V | 3A (Tc) | 1.5 Ohm @ 1A, 10V | 5.5V @ 1mA | 8nC @ 10V | 185pF @ 25V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | MOSFET LOW ON-RESISTANCE AND FAS | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 44W (Tc) | N-Channel | 600V | 3A (Tc) | 1.5 Ohm @ 1A, 10V | 5.5V @ 1mA | 8nC @ 10V | 185pF @ 25V | ±20V | 10V | ||||||
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VIEW | Rohm Semiconductor | MOSFET LOW ON-RESISTANCE AND FAS | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 44W (Tc) | N-Channel | 600V | 3A (Tc) | 1.5 Ohm @ 1A, 10V | 5.5V @ 1mA | 8nC @ 10V | 185pF @ 25V | ±20V | 10V | ||||||
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RFQ |
113
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V TO220SIS | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | 1300pF @ 25V | ±30V | 10V | ||||
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RFQ |
66
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V TO220SIS | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1.2mA | 40nC @ 10V | 1300pF @ 25V | ±30V | 10V | ||||
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RFQ |
4,995
In-stock
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Renesas Electronics America | MOSFET N-CH 30V 25A HWSON | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-HWSON (3.3x3.3) | 15W (Tc) | N-Channel | 30V | 25A (Ta) | 6.3 mOhm @ 12.5A, 10V | 10.4nC @ 4.5V | 1890pF @ 10V | ±20V | 4.5V, 10V | |||||
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RFQ |
4,995
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 25A HWSON | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-HWSON (3.3x3.3) | 15W (Tc) | N-Channel | 30V | 25A (Ta) | 6.3 mOhm @ 12.5A, 10V | 10.4nC @ 4.5V | 1890pF @ 10V | ±20V | 4.5V, 10V | |||||
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VIEW | Renesas Electronics America | MOSFET N-CH 30V 25A HWSON | $proddata[$product['id']]['package'] | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-HWSON (3.3x3.3) | 15W (Tc) | N-Channel | 30V | 25A (Ta) | 6.3 mOhm @ 12.5A, 10V | 10.4nC @ 4.5V | 1890pF @ 10V | ±20V | 4.5V, 10V | ||||||
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RFQ |
2,145
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | |||
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RFQ |
2,145
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | |||
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VIEW | Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | ||||
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RFQ |
5,508
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | 1.5V, 4.5V | |||
