- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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RFQ |
2,145
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | ||
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RFQ |
2,145
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | ||
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VIEW | Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | 1.5V, 4.5V | |||
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RFQ |
5,508
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | 1.5V, 4.5V | ||
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RFQ |
5,508
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | 1.5V, 4.5V | ||
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RFQ |
3,000
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | $proddata[$product['id']]['package'] | U-MOSVI | Active | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | 1.5V, 4.5V | ||
