- Manufacture :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
5 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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RFQ |
14
In-stock
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Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | Active | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-247-3 | TO-247 | 360W (Tc) | N-Channel | 650V | 57A (Ta) | 40 mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105nC @ 10V | 6250pF @ 300V | ±30V | 10V | ||||
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VIEW | STMicroelectronics | POWER TRANSISTORS | Automotive, AEC-Q101, MDmesh™ DM2 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 300W (Tc) | N-Channel | 650V | 38A (Tc) | 87 mOhm @ 19A, 10V | 5V @ 250µA | 69nC @ 10V | 3200pF @ 100V | ±25V | 10V | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 1200V 8A TO-247 | $proddata[$product['id']]['package'] | MDmesh™ K5 | Active | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | 1200V | 6A (Tc) | 2 Ohm @ 2.5A, 10V | 5V @ 100µA | 13.7nC @ 10V | 505pF @ 100V | 10V | ||||
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RFQ |
200
In-stock
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STMicroelectronics | NCHANNEL 600 V 105 MOHM TYP. 26 | MDmesh™ M6 | Active | MOSFET (Metal Oxide) | Through Hole | TO-247-3 | TO-247 | N-Channel | 600V | ||||||||||||
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RFQ |
200
In-stock
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STMicroelectronics | NCHANNEL 600 V 105 MOHM TYP. 22 | MDmesh™ M6 | Active | MOSFET (Metal Oxide) | Through Hole | TO-247-3 | TO-247 | N-Channel | 600V | ||||||||||||
