Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Part Status Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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RFQ
RFQ
5,224
In-stock
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 4A 2-2Y1A $proddata[$product['id']]['package'] Active 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-UDFN (2x2) 2 P-Channel (Dual) Logic Level Gate 20V 4A 95 mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6nC @ 4.5V 290pF @ 10V
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Per Unit
$0.82
RFQ
RFQ
5,224
In-stock
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 4A 2-2Y1A $proddata[$product['id']]['package'] Active 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-UDFN (2x2) 2 P-Channel (Dual) Logic Level Gate 20V 4A 95 mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6nC @ 4.5V 290pF @ 10V
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Per Unit
$0.28
RFQ
RFQ
3,000
In-stock
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 4A 2-2Y1A $proddata[$product['id']]['package'] Active 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-UDFN (2x2) 2 P-Channel (Dual) Logic Level Gate 20V 4A 95 mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6nC @ 4.5V 290pF @ 10V