- Current - Reverse Leakage @ Vr :
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18 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Packaging | Operating Temperature | Mounting Type | Tolerance | Package / Case | Power - Max | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | |
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GLOBAL STOCKS | ||||||||||||||||||||
|
RFQ |
2,107
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 19V | 27V | 30 Ohms | ||||
|
RFQ |
1,709
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 17V | 24V | 30 Ohms | ||||
|
RFQ |
1,187
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 16V | 22V | 30 Ohms | ||||
|
RFQ |
3,467
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 14V | 20V | 30 Ohms | ||||
|
RFQ |
3,418
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 13V | 18V | 30 Ohms | ||||
|
RFQ |
3,202
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 11V | 16V | 30 Ohms | ||||
|
RFQ |
840
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 10V | 15V | 30 Ohms | ||||
|
RFQ |
1,542
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 9V | 13V | 30 Ohms | ||||
|
RFQ |
1,264
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 8V | 12V | 30 Ohms | ||||
|
RFQ |
2,107
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 19V | 27V | 30 Ohms | ||||
|
RFQ |
1,709
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 17V | 24V | 30 Ohms | ||||
|
RFQ |
1,187
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 16V | 22V | 30 Ohms | ||||
|
RFQ |
3,467
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 14V | 20V | 30 Ohms | ||||
|
RFQ |
3,418
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 13V | 18V | 30 Ohms | ||||
|
RFQ |
3,202
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 11V | 16V | 30 Ohms | ||||
|
RFQ |
840
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 10V | 15V | 30 Ohms | ||||
|
RFQ |
1,542
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 9V | 13V | 30 Ohms | ||||
|
RFQ |
1,264
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F DIODE M-FLAT MOQ=3000 V | Active | - | -40°C ~ 150°C (TJ) | Surface Mount | ±10% | SOD-128 | 2W | M-FLAT (2.4x3.8) | 1.2V @ 200mA | 10µA @ 8V | 12V | 30 Ohms |